Gate Drive for SiC MOSFET Module

In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

This is a picture of Gate Drive for SiC MOSFET Module.
Board Appearance
TLP5231 TLP5231 TPC8132 TPC8132 SSM6K804R SSM6K804R SSM6K804R SSM6K804R TCR1HF50B TCR1HF50B SSM3K15AFS SSM3K15AFS 2SC6026MFV 2SC6026MFV TLP5231 TLP5231 TPC8132 TPC8132 SSM6K804R SSM6K804R SSM6K804R SSM6K804R TCR1HF50B TCR1HF50B SSM3K15AFS SSM3K15AFS 2SC6026MFV 2SC6026MFV

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特性

  • Developed an isolated gate driver equipped with various protection functions for high-current / high-voltage SiC MOSFET modules
  • Parameters are set assuming combination with our SiC MOSFET modules (MG400V2YMS3, MG600Q2YMS3, MG250YD2YMS3)
  • Realized in the same size as our SiC MOSFET modules

說明

Power supply voltage for control DC24V
Number of driving channels 2 ch：Low-side, High-side
Gate control signal input 5V CMOS
Gate drive output +20V (Typ.) / -6.7V (Typ.)

設計文件

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設計數據

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使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Photocoupler (photo-IC output) Pre driver・2 Photocoupler (photo-IC output), Power device pre-driver, IOP=+/-2.5 A, 5000 Vrms, SO16L
Power MOSFET (P-ch single) Turn on buffer・2 P-ch MOSFET, -40 V, 0.025 Ω@10V, SOP-8, U-MOSⅥ
Small Low ON resistance MOSFETs Turn off buffer・4 N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F
Low Dropout (LDO) Linear Voltage Regulator Generates control power supply voltage・4 High voltage, Low quiescent current, Fast load transient CMOS Linear Regulator
Small-signal MOSFET Input signal drive・２ N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-416(SSM)
Transistor for low frequency small-signal amplification Fault detection signal output・2 NPN Bipolar Transistor, 50 V, 0.15 A, SOT-723(VESM)

相關文件

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應用

Inverter/Servo
Such as low power consumption, miniaturization and robust operation are important in designing inverter/servo. Toshiba provides information on a wide range of semiconductor products suitable for power supply unit, motor driving circuit units, signal transmission units, etc., along with circuit configuration examples.
詳細資料
Mega-solar Inverters
Such as high efficiency and miniaturization are important in designing mega-solar inverter. Toshiba provides information on a wide range of semiconductor products suitable for inverter circuit unit, gate driving circuit unit, signal transmission unit, etc., along with circuit configuration examples.
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