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If the transient voltage at the input terminal of the eFuse IC exceeds the absolute maximum rating, connect a Zener diode between the input terminal and GND.
For negative spike voltage generated on the output side, SBD (Schottky barrier diode) can be connected to prevent the output potential from dropping below GND.
To reduce the inductance of the pattern connected to the eFuse IC, make the length on the input and output sides as short as possible, and make the GND area as wide as possible to reduce the impedance.