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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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If the transient voltage at the input terminal of the eFuse IC exceeds the absolute maximum rating, connect a Zener diode between the input terminal and GND.
For negative spike voltage generated on the output side, SBD (Schottky barrier diode) can be connected to prevent the output potential from dropping below GND.
To reduce the inductance of the pattern connected to the eFuse IC, make the length on the input and output sides as short as possible, and make the GND area as wide as possible to reduce the impedance.