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Dual MOSFET with N-Channel + P-Channel Configuration for Miniaturization and Low Power Consumption of Consumer and Industrial Equipment
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched the 30V dual MOSFET “SSM6L826R,” which integrates N‑channel and P‑channel configurations and is suitable for applications such as single‑phase brushless DC motor control, brushed DC motor control, and load switches for power supply lines in consumer and industrial equipment.
The new SSM6L826R features the TSOP6F package (2.9×2.8×0.8mm) with flat leads, which enhances chip‑mounting capability. As a result, the N‑channel MOSFET achieves a low drain‑source On‑resistance (RDS(ON)) of 46mΩ (max) (VGS=10 V)[1], while the P‑channel MOSFET achieves 45mΩ (max) (VGS=-10V)[2], enabling both small size and low power consumption.
With the RDS(ON) values of the N‑channel and P‑channel MOSFETs being nearly equivalent, their conduction losses are also almost the same, which simplifies circuit design. In addition, it features a dual configuration consisting of an N-channel MOSFET and a P-channel MOSFET with independent terminals, making it suitable for driving single-phase brushless DC motors and brushed DC motors. It can also be used in load switch applications, where the P-channel MOSFET controls ON/OFF switching of the power supply line and the N-channel MOSFET controls its gate, contributing to reductions in both the component mounting area and the number of required components.
The addition of this product expands the lineup of dual‑type MOSFETs using the TSOP6F package to three dual N‑channel MOSFETs[3], one dual P‑channel MOSFET[3], and two N‑channel + P‑channel MOSFETs[3], thereby broadening the range of product selection.
Toshiba will continue to expand its lineup of MOSFET products for consumer and industrial equipment, supporting high efficiency, low loss, and compact design.
Notes:
[1] Measurement conditions: ID=4.0A, Ta=25°C
[2] Measurement conditions: ID=-4.0A, Ta=25°C
[3] As of March 2026
Features
- Low and nearly equivalent RDS(ON) values for the N‑channel and P‑channel MOSFETs
- Dual MOSFET configuration (N‑channel + P‑channel) that helps reduce the component mounting area
- Small package with high allowable power dissipation
Explanation of Features
1. Low and nearly equivalent RDS(ON) values for the N‑channel and P‑channel MOSFETs
The N‑channel and P‑channel MOSFETs feature low RDS(ON) values that are nearly identical. This helps reduce conduction losses and contributes to lower power consumption in equipment. Furthermore, because the RDS(ON) values are almost the same, the conduction losses are also nearly identical, making circuit design easier.
N-channel MOSFET: RDS(ON)=46mΩ (max) (VGS=10V)[1]
P-channel MOSFET: RDS(ON)=45mΩ (max) (VGS=-10V)[2]
2. Dual MOSFET configuration (N‑channel + P‑channel) that helps reduce the component mounting area
The new product, which integrates an N‑channel and a P‑channel device in a dual‑MOSFET configuration, can be applied to single‑phase brushless DC motor and brushed DC motor drive circuits, enabling reductions in both component count and PCB mounting area.
3. Small package with high allowable power dissipation
The new product adopts a small TSOP6F package measuring 2.9×2.8×0.8mm, contributing to a reduction in mounting area. In addition, the flat lead structure enables a high allowable power dissipation (PD) of 1.0W[4] even with the small package size.
Note:
[4] Measurement conditions: Device mounted on an FR4 board. (Total rating) (25.4×25.4×1.6mm, Cu pad: 645mm2)
Applications
- Industrial equipment
Servers (cooling fans, etc.) - Consumer equipment
Desktop PCs (cooling fans, etc.)
Home appliances (robotic cleaners, etc.)
Healthcare devices (electric shavers, electric toothbrushes, etc.)
Main Specifications
(Ta＝25°C)
| Part number | Polarity | Package | Absolute maximum ratings | Electrical characteristics | Sample check & availability | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Name | Size (mm) | Drain-source voltage VDSS (V) |
Gate-source voltage VGSS (V) |
Drain current (DC) ID (A) |
Drain-source On-resistance RDS(ON) (mΩ) |
Input capacitance Ciss(pF) |
Total gate charge (gate-source plus gate-drain) Qg (nC) |
||||
| VGS= |4.5V| |
VGS= |10V| |
||||||||||
| Typ. | Max | Max | Typ. | Typ. | |||||||
| SSM6L826R | N-channel ＋ P-channel |
TSOP6F | 2.9×2.8 ×0.8 |
30 | +20/-12 | 4 | 64 | 46 | 280 | 2.5 |  |
| -30 | -20/+10 | -4 | 73 | 45 | 492 | 6.2 | |||||
| SSM6L807R[5] | N-channel ＋ P-channel |
TSOP6F | 2.9×2.8 ×0.8 |
30 | ±12 | 4 | 39.1 | - | 310 | 3.2 | |
| -20 | ±12 | -4 | 56 | 45 | 480 | 6.74 | |||||
| SSM6N815R[5] | N-channel dual | TSOP6F | 2.9×2.8 ×0.8 |
100 | ±20 | 2 | 142 | 103 | 290 | 3.1 | |
| SSM6N813R[5] | N-channel dual | TSOP6F | 2.9×2.8 ×0.8 |
100 | ±20 | 3.5 | 154 | 112 | 242 | 3.6 | |
| SSM6P816R[5] | P-channel dual | TSOP6F | 2.9×2.8 ×0.8 |
-20 | ±10 | -6 | 30.1 | - | 1030 | 16.6 | |
Note:
[5] Existing products
Related Contents
Selection Guide Small Signal and Logic (PDF: 8.71MB)
Introduction of small-package MOSFET (PDF: 476KB)
Queries about purchasing, sampling and IC reliability
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