SSM3K15AFS

Small-signal MOSFET

  • Related Reference Design(2)

Description

Application Scope Load Switches
Polarity N-ch
Generation U-MOSⅢ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-416 (SSM)
Package Image SSM
JEITA SC-75
Package Code SOT-416
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.7
Package Dimensions View
Land pattern dimensions View
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

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(Note1)(Note3)

SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 100 mA
Power Dissipation PD 0.1 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 1.5 V
Gate threshold voltage (Min) Vth - 0.8 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 6.0 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 3.6 Ω
Input capacitance (Typ.) Ciss - 13.5 pF
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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May,2015

Feb,2019

Sep,2024

Jan,2025

Jan,2025

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS Note
SSM3K15AFS,LF 3000 Yes General Use

Reference Design

This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.
This is a picture of Isolated Gate Drive Circuit for 3-Phase Inverter.
Isolated Gate Drive Circuit for 3-Phase Inverter
In recent years, 3-phase inverters in industrial equipment have become important to achieving a low-carbon society. This is the gate drive circuit with various protection functions which can safely drive the power module used for the 3-phase inverter.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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