Description

Application Scope Power Management Switches
Polarity N-ch + P-ch
Generation U-MOSⅦ-H / U-MOSⅥ
Internal Connection Independent
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TSOP6F
Package Image TSOP6F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS -8/+12 V
Drain current (Q1) ID 4 A
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS -12/+6 V
Drain current (Q2) ID -4 A
Power Dissipation PD 1.4 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 82
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 53
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 39.1
Input capacitance (Q1) (Typ.) Ciss - 310 pF
Total gate charge (Q1) (Typ.) Qg VGS=4.5V 3.2 nC
Gate threshold voltage (Q2) (Max) Vth - -1.2 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 45
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 56
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 76
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 157
Input capacitance (Q2) (Typ.) Ciss - 480 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4.5V 6.7 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

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May,2020

Feb,2024

Dec,2023

Mar,2024

Mar,2024

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