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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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SSM6L820R

新產品

Small-signal MOSFET 2 in 1

Description

Application Scope Power Management Switches
Polarity N-ch + P-ch
Generation U-MOSⅦ-H / U-MOSⅥ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available
Assembly bases 泰國

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TSOP6F
Package Image TSOP6F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions 檢視
Land pattern dimensions 檢視

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS -8/+12 V
Drain current (Q1) ID 4 A
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS -12/+6 V
Drain current (Q2) ID -4 A
Power Dissipation PD 1.4 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 82
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 53
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 39.1
Input capacitance (Q1) (Typ.) Ciss - 310 pF
Total gate charge (Q1) (Typ.) Qg VGS=4.5V 3.2 nC
Gate threshold voltage (Q2) (Max) Vth - -1.2 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 45
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 56
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 76
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 157
Input capacitance (Q2) (Typ.) Ciss - 480 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4.5V 6.7 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Name Date

May,2020

Jul,2020

Jul,2020

 

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Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
SSM6L820R,LF 3000 Yes -
SSM6L820R,LXGF 3000 - Yes Yes

Notes

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