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Loss-Comparison between SiC MOSFET and Si IGBT

Toshiba’s SiC MOSFET is intended for AC-DC converters, solar-powered inverters, and two-way DC-DC converters for UPS for industrial equipment. Compared with a 1200V Si IGBT (Insulated Gate-Type Bipolar Transistor) Toshiba’s 1200V SiC MOSFET offers higher switching speeds, lower ON-resistance, about a 77%[1] reduction in turn-OFF loss and about 76%[2] reduction in turn-ON loss, plus low-ON-voltage [3] in the drain-current range below 25A.

Turn-off Loss (SiC MOSFET vs. Si IGBT)<sup> [1]</sup>
Turn-off Loss (SiC MOSFET vs. Si IGBT) [1]

[1] Manufactured by company A IGBT Test Conditions: VCC=800 V, IC=10 A, Ta=150 °C, VGE=20 V/-5 V, Dielectric Load: L=1 mH

Toshiba SiC MOSFET (TW070J120B) Test Conditions: VDD=800 V, ID=10 A, Ta=150 °C, VGS=20 V/-5 V, Dielectric Load: L=1 mH

Turn-on Loss (SiC MOSFET vs. Si IGBT) <sup>[2]</sup>
Turn-on Loss (SiC MOSFET vs. Si IGBT) [2]

[2] IGBT test conditions manufactured by Company A: External gate resistor RG=150 Ω. Otherwise, the test conditions are the same as those of [1].

Toshiba SiC MOSFET (TW070J120B) test condition: externally gated resistive RG=47 Ω; others, same test condition as in [1].

I<sub>D</sub>, I<sub>C</sub> - V<sub>DS</sub>, V<sub>CE</sub> (SiC MOSFET vs Si IGBT)<sup>[3]</sup>

[3] Comparing our SiC MOSFET (TW070J120B) with Si IGBT manufactured by company A


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