Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories

Innovation Centre

At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.

Loss-Comparison between SiC MOSFET and Si IGBT

Toshiba’s SiC MOSFET is intended for AC-DC converters, solar-powered inverters, and two-way DC-DC converters for UPS for industrial equipment. Compared with a 1200V Si IGBT (Insulated Gate-Type Bipolar Transistor) Toshiba’s 1200V SiC MOSFET offers higher switching speeds, lower ON-resistance, about a 77%[1] reduction in turn-OFF loss and about 76%[2] reduction in turn-ON loss, plus low-ON-voltage [3] in the drain-current range below 25A.

Turn-off Loss (SiC MOSFET vs. Si IGBT)<sup> [1]</sup>
Turn-off Loss (SiC MOSFET vs. Si IGBT) [1]

[1] Manufactured by company A IGBT Test Conditions: VCC=800 V, IC=10 A, Ta=150 °C, VGE=20 V/-5 V, Dielectric Load: L=1 mH

Toshiba SiC MOSFET (TW070J120B) Test Conditions: VDD=800 V, ID=10 A, Ta=150 °C, VGS=20 V/-5 V, Dielectric Load: L=1 mH

Turn-on Loss (SiC MOSFET vs. Si IGBT) <sup>[2]</sup>
Turn-on Loss (SiC MOSFET vs. Si IGBT) [2]

[2] IGBT test conditions manufactured by Company A: External gate resistor RG=150 Ω. Otherwise, the test conditions are the same as those of [1].

Toshiba SiC MOSFET (TW070J120B) test condition: externally gated resistive RG=47 Ω; others, same test condition as in [1].

I<sub>D</sub>, I<sub>C</sub> - V<sub>DS</sub>, V<sub>CE</sub> (SiC MOSFET vs Si IGBT)<sup>[3]</sup>
ID, IC - VDS, VCE (SiC MOSFET vs Si IGBT)[3]

[3] Comparing our SiC MOSFET (TW070J120B) with Si IGBT manufactured by company A

Contacts

Technical inquiry

Contact us

Contact us

Frequently Asked Questions

FAQs

Queries about purchasing, sampling and IC reliability

Stock Check & Purchase

keyword:

Click this link to check inventory of TOSHIBA parts available at those distributors of Toshiba Electronics Europe GmbH ("TEE") who participate in netCOMPONENTS electronic components sourcing database. By clicking “click here to purchase” above, you will be opening a new browser window and leave our website to the each distributor's page. Please note that TEE provides this link solely as a convenience and for informational purposes only. By providing the link TEE does not guarantee availability of TOSHIBA part(s) as presented on the each distributor's page. TEE bears no responsibility for the accuracy or content of this external site. All information on this StockCheck page about TOSHIBA parts and their availability are provided by the netCOMPONENTS electronic components sourcing database.

Related information

A new window will open