Toshiba’s SiC MOSFET is intended for AC-DC converters, solar-powered inverters, and two-way DC-DC converters for UPS for industrial equipment. Compared with a 1200V Si IGBT (Insulated Gate-Type Bipolar Transistor) Toshiba’s 1200V SiC MOSFET offers higher switching speeds, lower ON-resistance, about a 77% reduction in turn-OFF loss and about 76% reduction in turn-ON loss, plus low-ON-voltage  in the drain-current range below 25A.
 Manufactured by company A IGBT Test Conditions: VCC=800 V, IC=10 A, Ta=150 °C, VGE=20 V/-5 V, Dielectric Load: L=1 mH
Toshiba SiC MOSFET (TW070J120B) Test Conditions: VDD=800 V, ID=10 A, Ta=150 °C, VGS=20 V/-5 V, Dielectric Load: L=1 mH
 IGBT test conditions manufactured by Company A: External gate resistor RG=150 Ω. Otherwise, the test conditions are the same as those of .
Toshiba SiC MOSFET (TW070J120B) test condition: externally gated resistive RG=47 Ω; others, same test condition as in .
 Comparing our SiC MOSFET (TW070J120B) with Si IGBT manufactured by company A
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