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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Loss-Comparison between SiC MOSFET and Si IGBT

Toshiba’s SiC MOSFET is intended for AC-DC converters, solar-powered inverters, and two-way DC-DC converters for UPS for industrial equipment. Compared with a 1200V Si IGBT (Insulated Gate-Type Bipolar Transistor) Toshiba’s 1200V SiC MOSFET offers higher switching speeds, lower ON-resistance, about a 77%[1] reduction in turn-OFF loss and about 76%[2] reduction in turn-ON loss, plus low-ON-voltage [3] in the drain-current range below 25A.

Turn-off Loss (SiC MOSFET vs. Si IGBT)<sup> [1]</sup>
Turn-off Loss (SiC MOSFET vs. Si IGBT) [1]

[1] Manufactured by company A IGBT Test Conditions: VCC=800 V, IC=10 A, Ta=150 °C, VGE=20 V/-5 V, Dielectric Load: L=1 mH

Toshiba SiC MOSFET (TW070J120B) Test Conditions: VDD=800 V, ID=10 A, Ta=150 °C, VGS=20 V/-5 V, Dielectric Load: L=1 mH

Turn-on Loss (SiC MOSFET vs. Si IGBT) <sup>[2]</sup>
Turn-on Loss (SiC MOSFET vs. Si IGBT) [2]

[2] IGBT test conditions manufactured by Company A: External gate resistor RG=150 Ω. Otherwise, the test conditions are the same as those of [1].

Toshiba SiC MOSFET (TW070J120B) test condition: externally gated resistive RG=47 Ω; others, same test condition as in [1].

I<sub>D</sub>, I<sub>C</sub> - V<sub>DS</sub>, V<sub>CE</sub> (SiC MOSFET vs Si IGBT)<sup>[3]</sup>

[3] Comparing our SiC MOSFET (TW070J120B) with Si IGBT manufactured by company A


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