Cross Reference Search
require 3 characters or more.
About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Keyword Search
Parametric Search
Stock Check & Purchase
Select Product Categories
Select Application
Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.
New Products / News
Loss-Comparison between SiC MOSFET and Si IGBT
Toshiba’s SiC MOSFET is intended for AC-DC converters, solar-powered inverters, and two-way DC-DC converters for UPS for industrial equipment. Compared with a 1200V Si IGBT (Insulated Gate-Type Bipolar Transistor) Toshiba’s 1200V SiC MOSFET offers higher switching speeds, lower ON-resistance, about a 77%[1] reduction in turn-OFF loss and about 76%[2] reduction in turn-ON loss, plus low-ON-voltage [3] in the drain-current range below 25A.
![Turn-off Loss (SiC MOSFET vs. Si IGBT)<sup> [1]</sup>](/content/dam/toshiba-ss-v2/master/en/semiconductor/product/mosfets/articles/loss-comparison-between-sic-mosfet-and-si-igbt_features_en_1.png)
[1] Manufactured by company A IGBT Test Conditions: VCC=800 V, IC=10 A, Ta=150 °C, VGE=20 V/-5 V, Dielectric Load: L=1 mH
Toshiba SiC MOSFET (TW070J120B) Test Conditions: VDD=800 V, ID=10 A, Ta=150 °C, VGS=20 V/-5 V, Dielectric Load: L=1 mH
![Turn-on Loss (SiC MOSFET vs. Si IGBT) <sup>[2]</sup>](/content/dam/toshiba-ss-v2/master/en/semiconductor/product/mosfets/articles/loss-comparison-between-sic-mosfet-and-si-igbt_features_en_2.png)
[2] IGBT test conditions manufactured by Company A: External gate resistor RG=150 Ω. Otherwise, the test conditions are the same as those of [1].
Toshiba SiC MOSFET (TW070J120B) test condition: externally gated resistive RG=47 Ω; others, same test condition as in [1].
![I<sub>D</sub>, I<sub>C</sub> - V<sub>DS</sub>, V<sub>CE</sub> (SiC MOSFET vs Si IGBT)<sup>[3]</sup>](/content/dam/toshiba-ss-v2/master/en/semiconductor/product/mosfets/articles/loss-comparison-between-sic-mosfet-and-si-igbt_features_en_3.png)
[3] Comparing our SiC MOSFET (TW070J120B) with Si IGBT manufactured by company A
Queries about purchasing, sampling and IC reliability
Stock Check & Purchase
require 3 characters or more.
keyword:
Click this link to check inventory of TOSHIBA parts available at those distributors of Toshiba America Electronic Components, Inc. ("TAEC") who participate in netCOMPONENTS electronic components sourcing database. Please note that TAEC is providing this link solely as a convenience. All quantities listed in inventory are subject to change and information provided in this page does not guarantee availability of product(s), please check with Distributor before relying on the quantities listed. In order to guarantee availability you must place an order with one of Toshiba’s distributors.
Related information
A new window will open