E3D SiC MOSFET Module Gate Driver

A gate driver for SiC MOSFET modules used in industrial and railway inverter/converter applications. Compatible with Toshiba's E3D-package SiC MOSFET modules, including the MG250YD2YMS3. Design resources such as schematics, BOMs, PCB layouts, together with guidance on design considerations, operation, and circuit tuning, help accelerate the development of SiC module gate drivers.

Board_Appearance
Board_Appearance
TCR1HF50B TCR1HF50B SSM3K15AFS SSM3K15AFS SSM3K15AFS SSM3K15AFS CRF03A CRF03A SSM6K804R SSM6K804R SSM6K804R SSM6K804R SSM6K804R SSM6K804R SSM6K804R SSM6K804R SSM6K804R SSM6K804R SSM6K804R SSM6K804R

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Features

  • Compact design with a PCB size equivalent to Toshiba's E3D-package SiC MOSFET module
    (Dimensions: 62 mm × 100 mm)
  • Single 24 V DC input generates +20 V/-6.7 V gate drive voltages and supports high-current gate driving with buffer MOSFETs
  • Features comprehensive protection functions, including DESAT overcurrent protection, UVLO, Active Miller Clamp (AMC), and FLT signal output for fault detection

Specifications

Power supply voltage for control DC 24V (Typ.)
Number of driving channel(s) 2 ch：Low-side, High-side
Gate control signal input DC 5V (Typ.)
Gate drive output +20V (Typ.) / -6.7V (Typ.)

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Application Area – Qty Description
Low Dropout (LDO) Linear Voltage Regulator Signal Interface and Gate Drive Circuits・4 High voltage, Low quiescent current, Fast load transient CMOS Linear Regulator
Small-signal MOSFET Signal Interface, Gate Drive, and Protection Circuits・12 N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-416(SSM)
Small Low ON resistance MOSFETs Gate Drive Circuit, Soft Turn-Off Circuit・6 N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F
Super fast-recovery diode DESAT Detection Circuit・6 600 V/0.7 A Rectifier Diode, S-FLAT
Transistor for low frequency small-signal amplification 2 in 1 DESAT Detection Circuit・2 PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-353(USV)

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

Applications

Inverter/Servo
Such as low power consumption, miniaturization and robust operation are important in designing inverter/servo. Toshiba provides information on a wide range of semiconductor products suitable for power supply unit, motor driving circuit units, signal transmission units, etc., along with circuit configuration examples.
세부 사항
Mega-solar Inverters
Such as high efficiency and miniaturization are important in designing mega-solar inverter. Toshiba provides information on a wide range of semiconductor products suitable for inverter circuit unit, gate driving circuit unit, signal transmission unit, etc., along with circuit configuration examples.
세부 사항

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