SSM3K72CTC

Small-signal MOSFET

  • Related Reference Design(2)

Description

Application Scope High-Speed Switching
Polarity N-ch
Generation U-MOSⅦ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name CST3C
Package Image CST3C
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
0.8×0.6×0.38
Package Dimensions 보기
Land pattern dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 60 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 150 mA
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.1 V
Gate threshold voltage (Min) Vth - 1.1 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 4.7 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=5V 4.4 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 3.9 Ω
Input capacitance (Typ.) Ciss - 11 pF
Total gate charge (Typ.) Qg VGS=4.5V 0.27 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Dec,2016

Mar,2019

Sep,2024

Nov,2024

Nov,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS Note
SSM3K72CTC,L3F 10000 Yes General Use

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Notes

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