Small-signal MOSFET 2 in 1
Application Scope | High-Speed Switching |
---|---|
Polarity | N-ch×2 |
Generation | U-MOSⅦ-H |
Internal Connection | Independent |
Component Product (Q1) | SSM6N56FE |
Component Product (Q2) | SSM6N56FE |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | SOT-563 (ES6) |
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Package Image | |
JEITA | SC-107C |
Package Code | SOT-563 |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
1.6×1.6×0.55 |
Package Dimensions | 보기 |
Land pattern dimensions | 보기 |
CAD data (Symbol, Footprint and 3D model) |
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Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1/Q2) | VDSS | 20 | V |
Gate-Source voltage (Q1/Q2) | VGSS | +/-8 | V |
Drain current (Q1/Q2) | ID | 800 | mA |
Power Dissipation | PD | 0.15 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 1.0 | V |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.5V | 840 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.8V | 480 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=2.5V | 300 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4.5V | 235 | mΩ |
Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 55 | pF |
Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=4.5V | 1.0 | nC |