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SSM6N56FE

Small-signal MOSFET 2 in 1

Description

Application Scope High-Speed Switching
Polarity N-ch×2
Generation U-MOSⅦ-H
Internal Connection Independent
Component Product (Q1) SSM6N56FE
Component Product (Q2) SSM6N56FE
RoHS Compatible Product(s) (#) Available
Assembly bases Thailand

Package Information

Toshiba Package Name ES6
Package Image ES6
JEITA SC-107C
Package Code SOT-563
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS 20 V
Gate-Source voltage (Q1/Q2) VGSS +/-8 V
Drain current (Q1/Q2) ID 800 mA
Power Dissipation PD 0.15 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.5V 840
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.8V 480
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=2.5V 300
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4.5V 235
Input capacitance (Q1/Q2) (Typ.) Ciss - 55 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=4.5V 1.0 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Name Date

Sep,2016

Jan,2020

Jan,2020

 

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Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
SSM6N56FE,LM 4000 Yes -
SSM6N56FE,LXGM 4000 - Yes Yes

Notes

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