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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F
This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.
Description
- Introduction of semiconductor-relay application with TPD7106F and power MOSFET
- Description of operation with the power supply reverse connection
- Example of 200A capable semiconductor-relay application
- Operation confirmation by spice simulation
Features
- Semiconductor-relay drive circuit using TPD7106F and 6pcs of power MOSFET, TKR74F04PB
- Reverse connection of power supply assuming reverse connection of the car battery
- Input voltage : 12V
- Maximum load current : 200A
- Built-in charge pump circuit
Reference design files
Design, Document
“Design・Document” contains the documents listed below.
Design, File
“Design・File” contains the contents listed below.
Toshiba items
| Part Number | Device Category | Portion Usage | Description |
|---|---|---|---|
| TPD7106F | Intelligent Power Ics | 1 | 1 channel High-Side N channel Power MOSFET Gate Driver/VDD= -18 to 27V/Built-in charge pump circuit /SSOP16 |
| TKR74F04PB | MOSFET | 6 | U-MOS IX-H/40V/0.6mΩ(typ)@VGS=10V/TO-220SM(W) |
Documents
* Cadence, the Cadence logo, OrCAD and OrCAD logo are trademarks or registered trademarks of Cadence Design Systems, Inc.
* PSpice® is a registered trademark of Cadence Design Systems, Inc.
* Other company names, product names, and service names may be trademarks of their respective companies.
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