Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F

This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.

Example of TPD7106F Application Circuit.

Features

  • Semiconductor-relay drive circuit using TPD7106F and 6pcs of power MOSFET, TKR74F04PB
  • Reverse connection of power supply assuming reverse connection of the car battery
  • Input voltage : 12V
  • Maximum load current : 200A
  • Built-in charge pump circuit

Description

  • Introduction of semiconductor-relay application with TPD7106F and power MOSFET
  • Description of operation with the power supply reverse connection
  • Example of 200A capable semiconductor-relay application
  • Operation confirmation by spice simulation
Simulation Waveform (Normal Operation) of TPD7106F Application Circuit.
Simulation Waveform (Normal Operation)

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Intelligent power device (High side power-MOSFET driver with built-in charge pump) 1 Automotive Gate driver for High-side switch, SSOP16
Power MOSFET (N-ch single 30V<VDSS≤60V) 6 N-ch MOSFET, 40 V, 250 A, 0.00074 Ω@10V, TO-220SM(W)

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