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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application. Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected. TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F
This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.
Semiconductor-relay drive circuit using TPD7106F and 6pcs of power MOSFET, TKR74F04PB
Reverse connection of power supply assuming reverse connection of the car battery
Input voltage : 12V
Maximum load current : 200A
Built-in charge pump circuit
Introduction of semiconductor-relay application with TPD7106F and power MOSFET
Description of operation with the power supply reverse connection
Example of 200A capable semiconductor-relay application