Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F

This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.

Example of TPD7106F Application Circuit.

特性

  • Semiconductor-relay drive circuit using TPD7106F and 6pcs of power MOSFET, TKR74F04PB
  • Reverse connection of power supply assuming reverse connection of the car battery
  • Input voltage : 12V
  • Maximum load current : 200A
  • Built-in charge pump circuit

說明

  • Introduction of semiconductor-relay application with TPD7106F and power MOSFET
  • Description of operation with the power supply reverse connection
  • Example of 200A capable semiconductor-relay application
  • Operation confirmation by spice simulation
Simulation Waveform (Normal Operation) of TPD7106F Application Circuit.
Simulation Waveform (Normal Operation)

設計文件

供設計人員使用的材料，例如電路操作概述和設計注意事項的解釋。請點擊每個選項以查看內容。

設計數據

提供可載入到EDA工具中的電路資料、PCB佈局資料以及PCB製造中使用的資料。來自多個工具供應商的可用格式。您可以使用喜歡的工具來自由的編輯它。

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Intelligent power device (High side power-MOSFET driver with built-in charge pump) 1 Automotive Gate driver for High-side switch, SSOP16
Power MOSFET (N-ch single 30V<VDSS≤60V) 6 N-ch MOSFET, 40 V, 250 A, 0.00074 Ω@10V, TO-220SM(W)

相關文件

我們提供有助於設計和考慮類似電路的材料，例如已安裝產品的應用說明。請點擊每個選項以查看內容。

應用

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詳細資料

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