This reference design provides design guide, data and other contents of 5kW Isolated Bidirectional DC-DC Converter using dual active bridge (DAB) conversion method with 1200V SiC MOSFETs.
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High Voltage Side | DC 732V to 768V |
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Low Voltage Side | DC 396V to 404V |
Rated Power | 5.0kW |
Circuit topology | Dual Active Bridge(DAB)Conversion Method |
Design Documents contain the documents below.
Design Data contains the contents listed below.
Part Number | Device Category | Portion Usage | Description |
---|---|---|---|
Power SiC MOSFETs | High voltage side switch・4 | N-ch SiC MOSFET, 1200 V, 0.07 Ω(typ.)@20V, TO-3P(N), 2nd Gen. | |
Power MOSFET (N-ch 500V<VDSS≤700V) | Low voltage side switch・4 | N-ch MOSFET, 650 V, 0.057 Ω@10V, TO-247, DTMOSⅣ | |
Photocoupler (photo-IC output) | Gate drive・8 | Photocoupler (photo-IC output), IGBT driver, IOP=+/-4.0 A, 5000 Vrms, SO16L | |
Photocoupler(Isolation Amplifier) | Voltage detection・2 | Photocoupler(Isolation Amplifier), Analog output, 5000 Vrms, DIP8 |