5 kW Isolated Bidirectional DC-DC Converter

This reference design provides design guide, data and other contents of 5kW Isolated Bidirectional DC-DC Converter using dual active bridge (DAB) conversion method with 1200V SiC MOSFETs.

Image of 5 kW Isolated Bidirectional DC-DC Converter.
TW070J120B TW070J120B TW070J120B TW070J120B TK49N65W5 TK49N65W5 TK49N65W5 TK49N65W5 TLP7920 TLP5214A

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特性

  • Efficiency：97% (Vin = 750 V, 100% load)
  • Outline size：565 mm x 360 mm x 270 mm
  • Total solution of SiC MOSFET, MOSFET, Smart Gate Driver and Isolation Amp.

說明

High Voltage Side DC 732V to 768V
Low Voltage Side DC 396V to 404V
Rated Power 5.0kW
Circuit topology Dual Active Bridge（DAB）Conversion Method
Efficiency curve of 5 kW Isolated Bidirectional DC-DC Converter.
Efficiency Curve

設計文件

設計・文件 包含以下文件。

設計數據

設計數據包含以下內容。

*1:實際PCB在CR5000BD上設計。其他文件由CR5000BD文件生成。

*2:數據在CR5000BD上生成。

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Power SiC MOSFETs High voltage side switch・4 N-ch SiC MOSFET, 1200 V, 0.07 Ω(typ.)@20V, TO-3P(N), 2nd Gen.
Power MOSFET (N-ch 500V<VDSS≤700V) Low voltage side switch・4 N-ch MOSFET, 650 V, 0.057 Ω@10V, TO-247, DTMOSⅣ
Photocoupler (photo-IC output) Gate drive・8 Photocoupler (photo-IC output), IGBT driver, IOP=+/-4.0 A, 5000 Vrms, SO16L
Photocoupler(Isolation Amplifier) Voltage detection・2 Photocoupler(Isolation Amplifier), Analog output, 5000 Vrms, DIP8

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