5 kW Isolated Bidirectional DC-DC Converter

This reference design provides design guide, data and other contents of 5kW Isolated Bidirectional DC-DC Converter using dual active bridge (DAB) conversion method with 1200V SiC MOSFETs.

Image of 5 kW Isolated Bidirectional DC-DC Converter.
TW070J120B TW070J120B TW070J120B TW070J120B TK49N65W5 TK49N65W5 TK49N65W5 TK49N65W5 TLP7920 TLP5214A

Features

  • Efficiency：97% (Vin = 750 V, 100% load)
  • Outline size：565 mm x 360 mm x 270 mm
  • Total solution of SiC MOSFET, MOSFET, Smart Gate Driver and Isolation Amp.

Description

High Voltage Side DC 732V to 768V
Low Voltage Side DC 396V to 404V
Rated Power 5.0kW
Circuit topology Dual Active Bridge（DAB）Conversion Method
Efficiency curve of 5 kW Isolated Bidirectional DC-DC Converter.
Efficiency Curve

Design Document

Design Document contains the documents listed below.

Design Data

Design Data contains the contents listed below.

*1:Actual PCB was designed on CR5000BD. The other files were made from CR5000BD file.

*2:The data was generated on CR5000BD.

Usage Toshiba Items

Part Number Device Category Portion Usage Description
Power MOSFET (N-ch 500V<VDSS≤700V) Low voltage side switch・4 N-ch MOSFET, 650 V, 0.057 Ω@10V, TO-247, DTMOSⅣ
Photocoupler (photo-IC output) Gate drive・8 Photocoupler (photo-IC output), IGBT driver, IOP=+/-4.0 A, 5000 Vrms, SO16L
Photocoupler(Isolation Amplifier) Voltage detection・2 Photocoupler(Isolation Amplifier), Analog output, 5000 Vrms, DIP8
Power SiC MOSFETs High voltage side switch・4 N-ch SiC MOSFET, 1200 V, 0.07 Ω(typ.)@20V, TO-3P(N), 2nd Gen.

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