This reference design provides design guide, data and other contents of 5kW Isolated Bidirectional DC-DC Converter using dual active bridge (DAB) conversion method with 1200V SiC MOSFETs.
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|Part Number||Device Category||Portion Usage||Description|
|Power SiC MOSFETs||High voltage side switch・4||N-ch SiC MOSFET, 1200 V, 0.07 Ω(typ.)@20V, TO-3P(N), 2nd Gen.|
|Power MOSFET (N-ch 500V<VDSS≤700V)||Low voltage side switch・4||N-ch MOSFET, 650 V, 0.057 Ω@10V, TO-247, DTMOSⅣ|
|Photocoupler (photo-IC output)||Gate drive・8||Photocoupler (photo-IC output), IGBT driver, IOP=+/-4.0 A, 5000 Vrms, SO16L|
|Photocoupler(Isolation Amplifier)||Voltage detection・2||Photocoupler(Isolation Amplifier), Analog output, 5000 Vrms, DIP8|
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