What is thermal runaway * of the SiC Schottky barrier diode (SBD)?

Since the leakage current of SiC SBD is about 1/10 that of Si SBD, thermal runaway is less likely to occur.

In the case of conventional Si SBD, some products have relatively large leakage current even at 80% of the rated voltage, and some of them are difficult to use from the viewpoint of thermal runaway.

The leakage current of our SiC SBD is about 1/10 that of Si SBD because of the difference in work function due to chip material (SiC) and optimization by chip design (JBS structure: Junction barrier Schottky structure).

Leakage current increases at high temperature. Therefore, if heat generation due to loss (= leakage current x applied voltage) exceeds the heat radiation performance of the device including the package, the internal chip temperature rises, eventually resulting in thermal destruction.