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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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What is thermal runaway * of the SiC Schottky barrier diode (SBD)?

Since the leakage current of SiC SBD is about 1/10 that of Si SBD, thermal runaway is less likely to occur.

In the case of conventional Si SBD, some products have relatively large leakage current even at 80% of the rated voltage, and some of them are difficult to use from the viewpoint of thermal runaway.

The leakage current of our SiC SBD is about 1/10 that of Si SBD because of the difference in work function due to chip material (SiC) and optimization by chip design (JBS structure: Junction barrier Schottky structure).

*: Thermal runaway

Leakage current increases at high temperature. Therefore, if heat generation due to loss (= leakage current x applied voltage) exceeds the heat radiation performance of the device including the package, the internal chip temperature rises, eventually resulting in thermal destruction.

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