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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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This section explains how to prevent static electricity from destroying the gate oxide by inserting a ESD protector between the gate and source of MOSFET.
When static electricity is applied to the gate during board mounting, etc., the gate oxide may be destroyed. In such cases, there is a way to protect MOSFET by inserting an ESD protection diode between the gate and source terminals. Some products adopt this measure. It absorbs a large overvoltage (surge) in a short time and works so as not to apply a voltage over a certain voltage to other semiconductor products.
Check the data sheet.
Also, as a countermeasure during the mounting process, be sure to ground the facilities and tools (test equipment, workbenches, floor mats, tools, soldering irons, etc.) to be used, and prevent static electricity from accumulating.
Personnel should wear electrostatic clothing and shoes, and be grounded with a wrist strap, etc.
See also the documentation below.