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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Electrical characteristics of bipolar transistors
The following is an example of the electrical characteristics table for an NPN transistor.
| Characteristic | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| 1. Collector cut-off current | ICBO | VCB = 60 V, IE = 0 | － | － | 0.1 | μA |
| 2. Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 | － | － | 0.1 | μA |
| 3. DC current gain | hFE(1)(Note) | VCE = 6 V, IC = 2mA | 70 | － | 700 | |
| hFE(2) | VCE = 6 V, IC = 150 mA | 25 | 100 | － | ||
| 4. Collector-emitter saturation voltage | VCE(SAT) | IC = 100 mA, IB = 10 mA | － | 0.1 | 0.25 | V |
| 5. Base-emitter saturation voltage | VBE(SAT) | IC = 100 mA, IB = 10 mA | － | － | 1.0 | V |
| Transition frequency | fT | VCE = 10 V, IC = 1 mA | 80 | － | － | MHz |
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1MHz | － | 2.0 | 3.5 | pF |
| Resistor in series with the base | rbb' | VCE = 10 V, IE = -1mA, f = 30MHz | － | 50 | － | Ω |
| Noise figure | NF | VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kΩ | － | 1 | 10 | dB |
- Note: hFE(1) classification O: 70 to 140, Y: 120 to 240, GR: 200 to 400, BL: 350 to 700
ICBO measurement
2. Emitter cut-off current
IEBO measurement
3. DC current gain
DC current gain hFE measurement
Increase the base-emitter voltage, VBE, until the collector current, IC, reaches the specified value. Adjust VBE to keep IC constant and measure the base current, IB. Calculate the DC current gain, hFE, as shown below:
hFE=IC/IB
Example of a DC current gain (hFE) curve
4. Collector-emitter saturation voltage
Measurement of collector-emitter saturation voltage, VCE(sat)
Apply the specified constant collector current, IC, to increase the base-emitter voltage, VBE, until the base current, IB, reaches the specified value. Adjust IC to keep IB constant and measure the collector-emitter voltage.
5. Base-emitter saturation voltage
Measurement of base-emitter saturation voltage, VBE(sat)
Apply the specified constant collector current, IC, to increase the base-emitter voltage, VBE, until the base current, IB, reaches the specified value. Adjust IC to keep IB constant and measure the base-emitter voltage.
Note: Keep the open-circuit voltage of the constant-current source below the collector-emitter breakdown voltage.
Example of collector-emitter saturation voltage (VCE(sat)) curves
