Not Recommended for New Design

Radio-frequency SiGe Heterojunction Bipolar Transistor


Application Scope UHF/SHF band low noise amplifier
Polarity NPN
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name USQ
Package Image USQ
Package Code SOT-343
Pins 4
Mounting Surface Mount
Package Dimensions 보기
Land pattern dimensions 보기

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC 0.05 A
Collector power dissipation PC 100 mW
Collector power dissipation (mounted on board) PC 250 mW
Junction temperature Tj 150
Collector-emitter voltage VCEO 4 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Insertion Gain (Typ.) |S21|2 f=2GHz 16.9 dB
Transition frequency (Typ.) fT - 26.5 GHz
Noise Figure (Typ.) NF f=2GHz 0.55 dB


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Automotive V2X
Such as reduction of power supply and signal noise and reduction of power consumption are important in designing V2X. Toshiba provides information on a wide range of semiconductor products suitable for RF block units, power supply units, etc., along with circuit configuration examples.

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