TK160F10N1L

Not Recommended for New Design

Power MOSFET (N-ch single 60V<VDSS≤150V)

Description

Application Scope DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TO-220SM(W)
Package Image TO-220SM(W)
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
10.0×13.0×3.5
Package Dimensions 보기
Land pattern dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 160 A
Power Dissipation PD 375 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 3.7
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.4
Input capacitance (Typ.) Ciss - 10100 pF
Total gate charge (Typ.) Qg VGS=10V 122 nC

Document

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May,2016

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