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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.

TK160F10N1L

不推薦用於新設計

Power MOSFET (N-ch single 60V<VDSS≤150V)

產品概要

Application Scope DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

包裝資訊

Toshiba Package Name TO-220SM(W)
Package Image TO-220SM(W)
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
10.0×13.0×3.5
Package Dimensions 檢視
Land pattern dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 單位
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 160 A
Power Dissipation PD 375 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Max) Vth - 3.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 3.7
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.4
Input capacitance (Typ.) Ciss - 10100 pF
Total gate charge (Typ.) Qg VGS=10V 122 nC

文檔

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名稱 日期

May,2016

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