TK1R5R04PB

Not Recommended for New Design

Power MOSFET (N-ch single 30V<VDSS≤60V)

Description

Application Scope DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name D2PAK+
Package Image D2PAK+
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
10.0×15.0×3.5
Package Dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 160 A
Power Dissipation PD 205 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.0 V
Gate threshold voltage (Min) Vth - 2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 2.05
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 1.5
Input capacitance (Typ.) Ciss - 5500 pF
Total gate charge (Typ.) Qg VGS=10V 103 nC
Reverse recovery time (Typ.) trr - 100 ns
Reverse recovery charge (Typ.) Qrr - 100 nC

Document

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May,2016

애플리케이션

Automotive V2X
Such as reduction of power supply and signal noise and reduction of power consumption are important in designing V2X. Toshiba provides information on a wide range of semiconductor products suitable for RF block units, power supply units, etc., along with circuit configuration examples.

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