Power MOSFET (N-ch single 60V<VDSS≤150V)
Application Scope | High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers |
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Polarity | N-ch |
Generation | U-MOSⅩ-H |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | SOP Advance / SOP Advance(N) |
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Package Image | |
Pins | 8 |
Mounting | Surface Mount |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 150 | V |
Gate-Source voltage | VGSS | 20 | V |
Drain current | ID | 64 | A |
Power Dissipation | PD | 210 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 4.3 | V |
Gate threshold voltage (Min) | Vth | - | 3.3 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=8V | 11 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 9 | mΩ |
Input capacitance (Typ.) | Ciss | - | 3500 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 44 | nC |
Output charge (Typ.) | Qoss | - | 87 | nC |
Reverse recovery time (Typ.) | trr | - | 72 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 133 | nC |