Power MOSFET (N-ch single 60V<VDSS≤150V)

  • Related Reference Design(2)


Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP Advance / SOP Advance(N)
Package Image SOP Advance / SOP Advance(N)
Pins 8
Mounting Surface Mount

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 150 V
Gate-Source voltage VGSS 20 V
Drain current ID 64 A
Power Dissipation PD 210 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=8V 11
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 9
Input capacitance (Typ.) Ciss - 3500 pF
Total gate charge (Typ.) Qg VGS=10V 44 nC
Purchase and Sample
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You can search for and purchase a small on-line sample by clicking on the following link.


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Orderable part number

Orderable part number
MOQ(pcs) Reliability
TPH9R00CQH,LQ 5000 - Yes


Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.

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