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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Power MOSFET (N-ch single VDSS≤30V)
Application Scope | Power Management Switches |
---|---|
Polarity | N-ch |
Generation | U-MOSⅧ |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
This product is under full production, but the following new product(s) are also recommended for new designs.
Part Number | Compatible level | Notes |
---|---|---|
TPN2R903PL | Package and characteristics are almost same | Almost same ON resistance |
TPN1R603PL | Package and characteristics are almost same | Slightly lower ON resistance |
Toshiba Package Name | TSON Advance |
---|---|
Package Image |
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Pins | 8 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
3.3×3.3×0.85 |
Package Dimensions | 보기 |
Land pattern dimensions | 보기 |
CAD data (Symbol, Footprint and 3D model) |
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Please refer to the link destination to check the detailed size.
(Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 30 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 100 | A |
Power Dissipation | PD | 42 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 2.3 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 3.6 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 2.2 | mΩ |
Input capacitance (Typ.) | Ciss | - | 2230 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 34 | nC |