TK16N60W

Power MOSFET (N-ch 500V<VDSS≤700V)

  • Related Reference Design(1)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅣ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-247
Package Image TO-247
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
15.94×20.95×5.02
Package Dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 15.8 A
Power Dissipation PD 130 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.7 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 190
Input capacitance (Typ.) Ciss - 1350 pF
Total gate charge (Typ.) Qg VGS=10V 38 nC
Purchase and Sample
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Document

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Aug,2023

Oct,2023

Oct,2023

Oct,2023

Dec,2023

Feb,2024

Feb,2024

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TK16N60W,S1VF 30 Yes

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Notes

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