Power MOSFET (N-ch 500V<VDSS≤700V)
Application Scope | Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | π-MOSⅨ |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | TO-220SIS |
---|---|
Package Image | |
JEITA | SC-67 |
Pins | 3 |
Mounting | Through Hole |
Width×Length×Height (mm) |
10.0×15.0×4.5 |
Package Dimensions | 보기 |
CAD data (Symbol, Footprint and 3D model) |
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Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 600 | V |
Gate-Source voltage | VGSS | +/-30 | V |
Drain current | ID | 6.0 | A |
Power Dissipation | PD | 35 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 4.0 | V |
Gate threshold voltage (Min) | Vth | - | 2.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 1.2 | Ω |
Input capacitance (Typ.) | Ciss | - | 740 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 21 | nC |
Reverse recovery time (Typ.) | trr | - | 600 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 3300 | nC |