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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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TK1K2A60F

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Power MOSFET (N-ch 500V<VDSS≤700V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation π-MOSⅨ
Internal Connection Single
RoHS Compatible Product(s) (#) Available
Assembly bases China

Package Information

Toshiba Package Name TO-220SIS
Package Image TO-220SIS
JEITA SC-67
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
10.0×15.0×4.5
Package Dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 6.0 A
Power Dissipation PD 35 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 1.2 Ω
Input capacitance (Typ.) Ciss - 740 pF
Total gate charge (Typ.) Qg VGS=10V 21 nC

Document

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Name Date

Feb,2018

Jan,2019

 (Note) LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TK1K2A60F,S4X(S 50 Yes

Notes

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