SSM10N961L

Power MOSFET (N-ch dual)

  • Related Reference Design(1)

Description

Application Scope Power Management Switches / Lithium-Ion Secondary Batteries
Polarity N-ch×2
Generation U-MOSⅧ-H
Internal Connection Common drain
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TCSPAG-341501
Package Image TCSPAG-341501
Pins 10
Mounting Surface Mount
Width×Length×Height
(mm)
3.37×1.47×0.11
Package Dimensions 보기
Land pattern dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Power Dissipation PD 1.51 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 2.3 V
Purchase and Sample
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Document

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Sep,2024

Dec,2024

Dec,2024

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS Note
SSM10N961L,ELF 10000 Yes General Use

Reference Design

PCB photo example of Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET
This power multiplexer circuit with 2 inputs and 1 output is realized on a small board. A new power multiplexer circuit usign common-drain MOSFET has been added to the already developed power multiplexer circuit reference design. These reference circuits allow switching between BBM and MBB modes by combining optimal devices such as MOSFET gate driver ICs and zener diodes from our diverse product lineup.

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Notes

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