SSM3K56MFV

Small Low ON resistance MOSFETs

  • Related Reference Design(1)

Description

Application Scope High-Speed Switching
Polarity N-ch
Generation U-MOSⅦ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name VESM
Package Image VESM
JEITA SC-105AA
Package Code SOT-723
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
1.2×1.2×0.5
Package Dimensions 보기
Land pattern dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 20 V
Gate-Source voltage VGSS +/-8 V
Drain current ID 800 mA
Power Dissipation PD 0.15 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 1.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 840
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 480
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 300
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 235
Input capacitance (Typ.) Ciss - 55 pF
Total gate charge (Typ.) Qg VGS=4.5V 1.0 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Dec,2013

Feb,2019

Mar,2023

Sep,2023

Sep,2023

(Note) LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS Note
SSM3K56MFV,L3F 8000 Yes General Use

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