Description

Application Scope High-Speed Switching / Analog Switches
Polarity N-ch
Generation U-MOSⅢ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name CST3C
Package Image CST3C
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
0.8×0.6×0.38
Package Dimensions 보기
Land pattern dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 20 V
Gate-Source voltage VGSS +/-10 V
Drain current ID 250 mA
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 1.0 V
Gate threshold voltage (Min) Vth - 0.35 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.2V 9.0 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 3.1 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 2.4 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 1.6 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 1.1 Ω
Input capacitance (Typ.) Ciss - 18 pF
Total gate charge (Typ.) Qg VGS=4.5V 0.34 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Nov,2024

Nov,2024

애플리케이션

Smart Watch
Such as low power consumption and miniaturization are important in designing smart watch. Toshiba provides information on a wide range of semiconductor products suitable for power supply and charge management units, sensor signal input units, display units, etc., along with circuit configuration examples.

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Notes

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