Description

Application Scope Power Management Switches / DC-DC Converters
Polarity N-ch×2
Generation U-MOSⅦ-H
Internal Connection Independent
Component Product (Q1) SSM6N62TU
Component Product (Q2) SSM6N62TU
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-363F (UF6)
Package Image Toshiba SSM6N62TU Small-signal MOSFET 2 in 1 product UF6 package image
Package Code SOT-363F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions 보기
Land pattern dimensions 보기
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3

SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS 20 V
Gate-Source voltage (Q1/Q2) VGSS +/-8 V
Drain current (Q1/Q2) ID 800 mA
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.2V 456
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.5V 173
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.8V 120
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=2.5V 98
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4.5V 85
Input capacitance (Q1/Q2) (Typ.) Ciss - 177 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=4.5V 2.0 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Jul,2016

Apr,2025

Jul,2025

Jun,2026

Jun,2026

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
Note 재고 확인 검색
SSM6N62TU,LF 3000 Yes - General Use
SSM6N62TU,LXHF 3000 - Yes Yes Automotive Use

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