TJ200F04M3L

Not Recommended for New Design

Power MOSFET (P-ch single)

ALL Data sheet Application Note Other

Data sheet

TJ200F04M3L Data sheet/Japanese[Jun,2020]PDF: 468KB

Data sheet

TJ200F04M3L Data sheet/English[Jun,2020]PDF: 334KB

Simulation Model

PSpice Model[Aug,2015]lib: 3KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

Data sheet

TJ200F04M3L Data sheet/Japanese[Jun,2020]PDF: 468KB

Data sheet

TJ200F04M3L Data sheet/English[Jun,2020]PDF: 334KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Aug,2015]lib: 3KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

Application Scope	DC-DC Converters / Automotive / Motor Drivers
Polarity	P-ch
Generation	U-MOSⅥ
Internal Connection	Single
AEC-Q101	Qualified(*)
RoHS Compatible Product(s) (#)	Available

Part Number	Compatible level	Notes
TJ90S04M3L	Different package and similar characteristics	Slightly higher ON resistance
XPH3R114MC	Different package and similar characteristics	Slightly higher ON resistance

Toshiba Package Name	TO-220SM(W)
Package Image
Pins	3
Mounting	Surface Mount
Width×Length×Height (mm)	10.0×13.0×3.5
Package Dimensions	보기
Land pattern dimensions	보기
CAD data (Symbol, Footprint and 3D model)	Download from UltraLibrarian^® in your desired CAD format (Note)

Characteristics	Symbol	Rating	Unit
Drain-Source voltage	V_DSS	-40	V
Gate-Source voltage	V_GSS	+10/-20	V
Drain current	I_D	-200	A
Power Dissipation	P_D	375	W

Characteristics	Symbol	Condition	Value	Unit
Gate threshold voltage (Max)	V_th	-	-3.0	V
Gate threshold voltage (Min)	V_th	-	-2.0	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	1.8	mΩ
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=6V	2.6	mΩ
Input capacitance (Typ.)	C_iss	-	12800	pF
Total gate charge (Typ.)	Q_g	V_GS=-10V	460	nC
Reverse recovery time (Typ.)	t_rr	-	90	ns
Reverse recovery charge (Typ.)	Q_rr	-	104	nC

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

Automotive Category Top

Body Electronics

xEV

In-Vehicle Infotainment

Advanced Driver-Assistance Systems (ADAS)

Chassis

Industrial Equipment Category Top

Infrastructure

BEMS/HEMS

Factory Automation

Commercial Equipment

Consumer / Personal Equipment Category Top

IoT Equipment

Healthcare

Wearable Device

Mobile

Computer Peripherals

Home Applicances

기타

TJ200F04M3L

Description

Recommended Product

Package Information

Absolute Maximum Ratings

Electrical Characteristics

Document

애플리케이션

기술 문의

Related Links

Notes