TJ200F04M3L

Not Recommended for New Design

Power MOSFET (P-ch single)

Description

Application Scope DC-DC Converters / Automotive / Motor Drivers
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TO-220SM(W)
Package Image TO-220SM(W)
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
10.0×13.0×3.5
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -40 V
Gate-Source voltage VGSS +10/-20 V
Drain current ID -200 A
Power Dissipation PD 375 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -3.0 V
Gate threshold voltage (Min) Vth - -2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 1.8
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 2.6
Input capacitance (Typ.) Ciss - 12800 pF
Total gate charge (Typ.) Qg VGS=-10V 460 nC
Reverse recovery time (Typ.) trr - 90 ns
Reverse recovery charge (Typ.) Qrr - 104 nC

Document

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Aug,2015

Applications

Automotive V2X
Such as reduction of power supply and signal noise and reduction of power consumption are important in designing V2X. Toshiba provides information on a wide range of semiconductor products suitable for RF block units, power supply units, etc., along with circuit configuration examples.

Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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