TW015N120C

Power SiC MOSFETs

Data sheet

TW015N120C Data sheet/Japanese[Sep,2024]PDF: 634KB

Data sheet

TW015N120C Data sheet/English[Sep,2024]PDF: 526KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Oct,2024]PDF: 176KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Oct,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Oct,2024]PDF: 85KB

Application Note

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

Application Note

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

Application Note

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

Data sheet

TW015N120C Data sheet/Japanese[Sep,2024]PDF: 634KB

Data sheet

TW015N120C Data sheet/English[Sep,2024]PDF: 526KB

Application Note

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

Application Note

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

Application Note

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Oct,2024]PDF: 176KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Oct,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Oct,2024]PDF: 85KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

Description

Application Scope Switching regulators
Polarity N-ch
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-247
Package Image TO-247
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 15.94×20.95×5.02
Package Dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 1200 V
Gate-Source voltage VGSS +25/-10 V
Drain current ID 100 A
Power Dissipation PD 431 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 5.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=18V 15 mΩ
Input capacitance (Typ.) Ciss - 6000 pF
Total gate charge (Typ.) Qg - 158 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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May,2023

Apr,2023

Apr,2023

Oct,2023

Oct,2024

Oct,2024

Oct,2024

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

애플리케이션

Uninterruptible power supply
Such as low power consumption and miniaturization are important in designing uninterruptible power supply (UPS). Toshiba provides information on a wide range of semiconductor products suitable for power sullpy units, inverter/converter units, control units, signal transmission units, etc., along with circuit configuration examples.
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