TW015N120C

Power SiC MOSFETs

數據表

TW015N120C 數據表/日文[Sep,2024]PDF: 634KB

數據表

TW015N120C 數據表/英文[Sep,2024]PDF: 526KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Oct,2024]PDF: 176KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Oct,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Oct,2024]PDF: 85KB

Application Note

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

Application Note

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

Application Note

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

數據表

TW015N120C 數據表/日文[Sep,2024]PDF: 634KB

數據表

TW015N120C 數據表/英文[Sep,2024]PDF: 526KB

Application Note

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

Application Note

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

Application Note

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Oct,2024]PDF: 176KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Oct,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Oct,2024]PDF: 85KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

產品概要

Application Scope Switching regulators
Polarity N-ch
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name TO-247
Package Image TO-247
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 15.94×20.95×5.02
Package Dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 值 單位
Drain-Source voltage VDSS 1200 V
Gate-Source voltage VGSS +25/-10 V
Drain current ID 100 A
Power Dissipation PD 431 W

電器特性

項目 符號 條件 值 單位
Gate threshold voltage (Max) Vth - 5.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=18V 15 mΩ
Input capacitance (Typ.) Ciss - 6000 pF
Total gate charge (Typ.) Qg - 158 nC
購買及樣品申請
請聯繫東芝的官方經銷商之一或最近的東芝銷售辦事處
點選以下連結搜索和購買小量樣品

文檔

  • 如果沒看到確認框則對應文件目前無法下載

May,2023

Apr,2023

Apr,2023

Oct,2023

Oct,2024

Oct,2024

Oct,2024

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

應用

Uninterruptible power supply
Such as low power consumption and miniaturization are important in designing uninterruptible power supply (UPS). Toshiba provides information on a wide range of semiconductor products suitable for power sullpy units, inverter/converter units, control units, signal transmission units, etc., along with circuit configuration examples.
詳細資料

技術方面問題

聯絡我們

聯絡我們

常見問題

常見問答

Notes

返回列表頁
開啟新視窗