Whether they are silicon-based or use silicon carbide (SiC) technology, MOSFETs will experience switching losses that are caused by their body diodes. Combatting the effects of this inherent parasitic element is vital if switching operations are to be kept at the maximum possible efficiency levels - and this is usually achieved through inclusion of an external Schottky Barrier Diode (SBD) in the switching system. However, such an approach takes up valuable board space, which will negate the scope for miniaturisation that moving to wide bandgap technology provides.
In one of Toshiba’s SiC Snacks, the advantages of having a built-in SBD, rather than a discrete one are discussed. Through this arrangement, unwanted power losses can be addressed without the allocating of extra PCB area.
You can access the SiC Snacks flyer on ‘Suppressing Body Diode Conduction Effects’ below:
The first 5 SiC Snacks are available to download here:
Download the snack you're interested in, or download them all together.