Integration of SBDs into SiC MOSFET Devices

Integration of SBDs into SiC MOSFET Devices

Whether they are silicon-based or use silicon carbide (SiC) technology, MOSFETs will experience switching losses that are caused by their body diodes. Combatting the effects of this inherent parasitic element is vital if switching operations are to be kept at the maximum possible efficiency levels - and this is usually achieved through inclusion of an external Schottky Barrier Diode (SBD) in the switching system. However, such an approach takes up valuable board space, which will negate the scope for miniaturisation that moving to wide bandgap technology provides.

In one of Toshiba’s SiC Snacks, the advantages of having a built-in SBD, rather than a discrete one are discussed. Through this arrangement, unwanted power losses can be addressed without the allocating of extra PCB area.

You can access the SiC Snacks flyer on ‘Suppressing Body Diode Conduction Effects’ below:

The first 5 SiC Snacks are available to download here:

1.  Suppressing Body Diode Conduction Effects
2.  The RDS(ON) x Qgd figure of merit (FoM)  
3.  Wide VGSS ratings
4.  Advanced packaging with Kelvin source pin
5.  Switching Capabilities

Download the snack you're interested in, or download them all together.  

SiC MOSFET product details and datasheets

The Switching Benefits Derived from Using SiC
Silicon carbide (SiC) MOSFETs are able to deliver much more impressive switching characteristics than their silicon-based equivalents.
Packaging & Configuration Advances Help Augment SiC Device Operation
Though the attributes that make silicon carbide (SiC) have undoubted value to the future of power system design, it is not just about what goes on within the semiconductor substrate itself.
Exploring SiC MOSFET Figure of Merit (FoM)
The on-resistance (RDS(ON)) of a MOSFET is an intrinsic property that causes static power losses and depends upon the inner structure of the MOSFET.
Enhancing Efficiency and Reliability with Wide VGSS and High Vth Ratings
The voltage applied between the gate and source of a MOSFET during operation is denoted ‘VGS’ and the highest possible value of VGS that can be applied without damage is VGSS. This is important as it simplifies design of the control circuit.
Making Servo Drives More Efficient in a Robotic/AGV Context
With all of us currently still living in what is a socially-distanced post-COVID world, the need for an automated approach to things remains very much apparent.
eFuses: Much more than ‘just a fuse’
Circuit protection is an essential part of modern electronics, not least as batteries with low internal resistance (and the ability to deliver huge and potentially damaging currents) are increasingly used in applications from portable devices through to vehicles of the future.

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