Enhancing Efficiency and Reliability with Wide VGSS and High Vth Ratings

Enhancing Efficiency and Reliability with Wide VGSS and High Vth Ratings

The voltage applied between the gate and source of a MOSFET during operation is denoted ‘VGS’ and the highest possible value of VGS that can be applied without damage is VGSS. This is important as it simplifies design of the control circuit.

Another important parameter is the gate-threshold voltage (Vth). With the electrical noise present in renewable, automotive and industrial applications, a high level of Vth can protect against spurious turn-ons of the MOSFETs.

In one of Toshiba’s SiC Snacks, the advantages of having high levels of VGSS and Vth are discussed and explained. Clearly, having greater tolerances within power system designs will lead to more reliable and robust solutions that are less susceptible to noise, high switching speeds and temperature variations.

You can access the SiC Snack flyer on ‘Wide VGSS and high Vth ratings’ below:

Available SiC Snacks:

1.  Wide VGSS ratings 
2.  Switching Capabilities
3.  The RDS(ON) x Qgd figure of merit (FoM) 
4.  Suppressing Body Diode Conduction Effects
5.  Advanced packaging with Kelvin source pin  

Download the snack you're interested in, or download them all together.  

SiC MOSFET product details and datasheets

The Switching Benefits Derived from Using SiC
Silicon carbide (SiC) MOSFETs are able to deliver much more impressive switching characteristics than their silicon-based equivalents.
Integration of SBDs into SiC MOSFET Devices
Whether they are silicon-based or use silicon carbide (SiC) technology, MOSFETs will experience switching losses that are caused by their body diodes.
Packaging & Configuration Advances Help Augment SiC Device Operation
Though the attributes that make silicon carbide (SiC) have undoubted value to the future of power system design, it is not just about what goes on within the semiconductor substrate itself.
Exploring SiC MOSFET Figure of Merit (FoM)
The on-resistance (RDS(ON)) of a MOSFET is an intrinsic property that causes static power losses and depends upon the inner structure of the MOSFET.
Making Servo Drives More Efficient in a Robotic/AGV Context
With all of us currently still living in what is a socially-distanced post-COVID world, the need for an automated approach to things remains very much apparent.
eFuses: Much more than ‘just a fuse’
Circuit protection is an essential part of modern electronics, not least as batteries with low internal resistance (and the ability to deliver huge and potentially damaging currents) are increasingly used in applications from portable devices through to vehicles of the future.

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