Packaging & Configuration Advances Help Augment SiC Device Operation

Though the attributes that make silicon carbide (SiC) have undoubted value to the future of power system design, it is not just about what goes on within the semiconductor substrate itself. How SiC-based devices are constructed, in terms of their packaging and other features, will also have a major contribution to play. Part of its ‘SiC Snacks’ series of short and accessible documents on wide bandgap technology, there is one that looks specifically at such aspects.

This concise but informative flyer deals with the benefits brought by having a Kelvin source pin. That will mean there is a dedicated pin for the driving signal, instead of having to rely on the power source pin for driving. Consequently, stray parasitic inductances between the gate and the source can be mitigated - resulting in faster switching speeds being maintained and reduced switching losses. By complementing this with the latest packaging innovations, it is possible to dissipate any generated heat from these devices, thereby assuring long-term operation. 

You can download the Toshiba SiC Snack entitled ‘Advanced Packaging with Kelvin Source Pin’ here: