Exploring SiC MOSFET Figure of Merit (FoM)

Exploring SiC MOSFET Figure of Merit (FoM)

The on-resistance (RDS(ON)) of a MOSFET is an intrinsic property that causes static power losses and depends upon the inner structure of the MOSFET.

The gate charge (Qgd) affects the switching losses and has to be replenished on every switching cycle, so its effect increases with switching frequency.

Together RDS(ON) and Qgd contribute to the overall losses of a MOSFET and they are often combined into a single number (Figure of Merit – FoM) by multiplying them together. This is an important value for comparing MOSFET performance.

In one of Toshiba’s SiC Snacks, the details of this FoM are explained, and the differences between Gen 2 and Gen 3 devices (80% improvement) are outlined.

You can access the SiC Snack flyer on ‘Optimal RDS(ON) * Qgd below:

Available SiC Snacks:

1.  The RDS(ON) x Qgd figure of merit (FoM) 
2.  Switching Capabilities
3.  Suppressing Body Diode Conduction Effects
4.  Wide VGSS ratings
5.  Advanced packaging with Kelvin source pin  

Download the snack you're interested in, or download them all together.  

SiC MOSFET product details and datasheets

The Switching Benefits Derived from Using SiC
Silicon carbide (SiC) MOSFETs are able to deliver much more impressive switching characteristics than their silicon-based equivalents.
Integration of SBDs into SiC MOSFET Devices
Whether they are silicon-based or use silicon carbide (SiC) technology, MOSFETs will experience switching losses that are caused by their body diodes.
Packaging & Configuration Advances Help Augment SiC Device Operation
Though the attributes that make silicon carbide (SiC) have undoubted value to the future of power system design, it is not just about what goes on within the semiconductor substrate itself.
Enhancing Efficiency and Reliability with Wide VGSS and High Vth Ratings
The voltage applied between the gate and source of a MOSFET during operation is denoted ‘VGS’ and the highest possible value of VGS that can be applied without damage is VGSS. This is important as it simplifies design of the control circuit.
Making Servo Drives More Efficient in a Robotic/AGV Context
With all of us currently still living in what is a socially-distanced post-COVID world, the need for an automated approach to things remains very much apparent.
eFuses: Much more than ‘just a fuse’
Circuit protection is an essential part of modern electronics, not least as batteries with low internal resistance (and the ability to deliver huge and potentially damaging currents) are increasingly used in applications from portable devices through to vehicles of the future.

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