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Chapter III : Transistors : Performance of MOSFETs: Characteristic of Capacitance

Capacitance characteristics of Ciss, Crss and Coss are important factors affecting switching characteristics of MOSFET.

Ciss: input capacitance (Ciss  = Cgd + Cgs)

 ⇒Sum of gate-drain and gate-source capacitance: It influences delay time; the bigger the Ciss, the longer the delay time.

Crss: Reverse transfer capacitance (Crss  = Cgd)

 ⇒Gate-drain capacitance: The bigger the Crss, the more the characteristic of drain current rising deteriorates, which is disadvantageous for MOSFETs’ loss. Low capacitance is needed to drive at high speed.

Coss: Output capacitance (Coss = Cgd + Cds)

 ⇒Sum of gate-drain and drain-source capacitance: It influences turn-off characteristic, and loss with light load. In the case of large Coss, turn-off  dv/dt decreases, which is advantageous for noise. But loss with light load increases.

Capacitance model of MOSFET
Fig. 3-11(a) Capacitance model of MOSFET
Typical capacitance characteristic of MOSFET
Fig. 3-11(b) Typical capacitance characteristic of MOSFET

Chapter III : Transistors

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