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MOSFET Performance Improvement: Decision Factors of R_DS(ON)

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(1) The MOSFET device structure is selected according to the required withstand voltage. The factors that determine the on-resistance R_{DS (ON)} are as shown in Figure 3-7 and Equation 3- (1). Depending on the structure of the device, the ratio of factors determining on-resistance will change.
(2) For example, many middle- and high-voltage MOSFETs (250 V or higher) have planar MOS (π-MOS) structure, and products with less than 200 V have more trench MOS (U-MOS). Therefore, when the withstand voltage V_DSS = 600 V, R_drift becomes the dominant factor, and in the case of 30 V, the ratio of _Rch is high.

Fig. 3-7(a) ON resistance decision factors of D-MOS

R_DS(ON）= R_sub + R_drift + R_J-FET + R_ch + R_N+

Fig. 3-7(b) ON resistance decision factors of trench MOS

R_DS(ON）= R_sub + R_drift + R_ch + R_{N+ ・・・}Equation 3-(1)

In the case of V_DSS=600 V, the order is R_drift >> R_ch > R_J-FET , R_N+ , R_sub and R_DS(ON) depends on R_drift
In the case of V_DSS=30V, the order is R_ch >> R_drift > R_N+ , R_sub. Dependence of R_DS(ON) on R_ch can be minimized by fine patterning of trench MOS structure.