型號查詢

交叉搜尋

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

關鍵字搜尋

參數搜尋

線上庫存查詢跟購買

Select Product Categories

Chapter III : Transistors : Performance of MOSFETs: Characteristic of Capacitance

Capacitance characteristics of Ciss, Crss and Coss are important factors affecting switching characteristics of MOSFET.

Ciss: input capacitance (Ciss  = Cgd + Cgs)

 ⇒Sum of gate-drain and gate-source capacitance: It influences delay time; the bigger the Ciss, the longer the delay time.

Crss: Reverse transfer capacitance (Crss  = Cgd)

 ⇒Gate-drain capacitance: The bigger the Crss, the more the characteristic of drain current rising deteriorates, which is disadvantageous for MOSFETs’ loss. Low capacitance is needed to drive at high speed.

Coss: Output capacitance (Coss = Cgd + Cds)

 ⇒Sum of gate-drain and drain-source capacitance: It influences turn-off characteristic, and loss with light load. In the case of large Coss, turn-off  dv/dt decreases, which is advantageous for noise. But loss with light load increases.

Capacitance model of MOSFET
Fig. 3-11(a) Capacitance model of MOSFET
Typical capacitance characteristic of MOSFET
Fig. 3-11(b) Typical capacitance characteristic of MOSFET

Chapter III : Transistors

Related information

開啟新視窗