Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories

Select Application

Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.

New Products / News

Innovation Centre

At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.

Chapter III : Transistors : Datasheets of MOSFET: Maximum Ratings

<Absolute maximum ratings>

  • Drain-source voltage (VDSS)
    Maximum voltage of drain to source that can be applied
  • Gate-source voltage(VGSS)
    Maximum voltage of drain to source that can be applied
    Circuit must be designed not to exceed this voltage including surge voltage.
  • Drain current (ID)
    Maximum drain current
  • Drain current (pulsed) (IDP)
    Maximum pulsed drain current
    Normally, pulse width is described in safe operating area.
  • Power dissipation (PD)
    Power loss allowed to generate in the device
    Allowable thermal capability at Tc=25℃.
  • Avalanche energy, single-pulse and continuous (EAS)
    Maximum allowed energy under designated condition
  • Avalanche current (IAR)
    Maximum current at avalanche operation
  • Channel temperature (Tch)
    Maximum channel temperature at which the device can operate
  • Storage temperature (Ttsg)
    Temperature range for storage without operating the MOSFET
Absolute maximum ratings

Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25℃(initial), L = 4.36 mH, RG = 25 Ω, IAR = 3.0 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

Chapter III : Transistors

Related information

A new window will open