Comparison of Transistors by Structure

Structure of transistors Bipolar Transistor (BJT) MOSFET IGBT

Gate (base)
driving method
Current driving
(Low input impedance)
Voltage driving
(High input impedance)
Voltage driving
(High input impedance)
Gate (base)
driving circuit
(High part counts)
Simple Simple
Low VCE(sat) High ON voltage
(High current region)
No threshold voltage
Low VCE(sat)
With threshold voltage
Switching speed Low speed
(with carrier accumulation effect)
Ultra high speed
(Unipolar operation)
High speed
(Middle of MOSFET and BJT)
(Include body diode)
No Yes (Body diode) No(Yes in RC structure)
Safe operating area Narrow Wide Middle

Chapter III : Transistors

Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Datasheets of MOSFET: Body Diode

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